As living standards increase, the energy consumption in refrigeration, such as air-conditioning and refrigerators, tremendously increases and intensifies global warming. As an alternative for the conventional vapor compression technique, solid state refrigeration based on magnetocaloric effect shows significant potential due to energy-saving and environmental-friendly properties. However, hysteresis loss is a longstanding problem seriously harming refrigeration efficiency. Here, we report novel enhancement of refrigeration efficiency controlled by strain memory effect in FeRh films grown on (011)-PMN-PT substrates. Utilizing nonvolatile strain triggered by a pulse electric field to engineer magnetization process of FeRh film, a nonvolatile large reduction of hysteresis loss, similar to 56%, is achieved, consequently effective refrigeration capacity increases to similar to 86%. The hysteresis loss can be expected to be eliminated and even turned out to be inverse through enhancing the strain memory effect. As a result, effective refrigeration capacity (RCeffe ) can increase to a new height through introducing external mechanical work in a magnetic refrigeration cycle, and the ideal COP (coefficient-of-performance) would break through Carnot limit if only hysteresis loss and the contribution of mechanical work were considered.
1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China 3.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China 4.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China 5.Chinese Acad Sci, Fujian Inst Innovat, Fujian 350108, Fujian, Peoples R China
Recommended Citation:
Qiao, Kaiming,Hu, Fengxia,Liu, Yao,et al. Novel reduction of hysteresis loss controlled by strain memory effect in FeRh/PMN-PT heterostructures[J]. NANO ENERGY,2019-01-01,59:285-294