Steffes, J.J., Department of Materials Science and Engineering, University of Connecticut, Storrs, CT 06269, United States, Integration and Yield Engineering, GlobalFoundries, Hopewell Junction, NY 12533, United States; Ristau, R.A., Institute of Materials Science, University of Connecticut, Storrs, CT 06269, United States; Ramesh, R., Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States, Department of Physics, University of California, Berkeley, CA 94720, United States, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States; Huey, B.D., Department of Materials Science and Engineering, University of Connecticut, Storrs, CT 06269, United States, Institute of Materials Science, University of Connecticut, Storrs, CT 06269, United States
Recommended Citation:
Steffes J.J.,Ristau R.A.,Ramesh R.,et al. Thickness scaling of ferroelectricity in BiFeO 3 by tomographic atomic force microscopy[J]. Proceedings of the National Academy of Sciences of the United States of America,2019-01-01,116(7)