globalchange  > 气候变化与战略
DOI: 10.1073/pnas.1808812115
论文题名:
Designing antiphase boundaries by atomic control of heterointerfaces
作者: Wang Z.; Guo H.; Shao S.; Saghayezhian M.; Li J.; Fittipaldi R.; Vecchione A.; Siwakoti P.; Zhu Y.; Zhang J.; Plummer E.W.
刊名: Proceedings of the National Academy of Sciences of the United States of America
ISSN: 0027-8424
出版年: 2018
卷: 115, 期:38
起始页码: 9485
结束页码: 9490
语种: 英语
英文关键词: Antiphase boundary ; Electron microscopy ; Extended defect nucleation ; Interfaces ; Theory
Scopus关键词: nuclease ; ruthenium ; ruthenium tetroxide ; strontium ; unclassified drug ; antiphase boundary ; Article ; atomic resolved electron microscopy ; behavior ; biofilm ; calculation ; chemical parameters ; electron microscopy ; energy ; enzyme substrate ; priority journal ; structure analysis
英文摘要: Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La 2/3 Sr 1/3 MnO 3 thin film grown on Sr 2 RuO 4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory. © 2018 National Academy of Sciences. All rights reserved.
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/163660
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作者单位: Wang, Z., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States, Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States; Guo, H., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Shao, S., Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, United States; Saghayezhian, M., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Li, J., Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States; Fittipaldi, R., Consiglio Nazionale Delle Ricerche-Superconducting and Other Innovative Materials and Devices Institute (SPIN), Dipartimento di Fisica, Università di Salerno, Fisciano, 132 - 84084, Italy; Vecchione, A., Consiglio Nazionale Delle Ricerche-Superconducting and Other Innovative Materials and Devices Institute (SPIN), Dipartimento di Fisica, Università di Salerno, Fisciano, 132 - 84084, Italy; Siwakoti, P., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Zhu, Y., Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States; Zhang, J., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Plummer, E.W., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States

Recommended Citation:
Wang Z.,Guo H.,Shao S.,et al. Designing antiphase boundaries by atomic control of heterointerfaces[J]. Proceedings of the National Academy of Sciences of the United States of America,2018-01-01,115(38)
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