metal
; vanadium
; acceleration
; anisotropy
; antiferromagnet
; Article
; density
; electric conductivity
; electric field
; electromagnetism
; electron
; energy
; magnetic field
; nanotechnology
; polarization
; priority journal
Gong, S.-J., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China; Gong, C., Nanoscale Science and Engineering Center, University of California, Berkeley, CA 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States; Sun, Y.-Y., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China; Tong, W.-Y., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China; Duan, C.-G., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China; Chu, J.-H., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China; Zhang, X., Nanoscale Science and Engineering Center, University of California, Berkeley, CA 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States
Recommended Citation:
Gong S.-J.,Gong C.,Sun Y.-Y.,et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors[J]. Proceedings of the National Academy of Sciences of the United States of America,2018-01-01,115(34)