globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2020.09.024
论文题名:
Reversible magnetism transition at ferroelectric oxide heterointerface
作者: Chen J.; Zhang Z.; Luo L.; Lu Y.; Song C.; Cheng D.; Chen X.; Li W.; Ren Z.; Wang J.; Tian H.; Zhang Z.; Han G.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期:24
起始页码: 2094
结束页码: 2099
语种: 英语
中文关键词: Ferroelectric polarization ; Interface ; Magnetic transition ; SrTiO3/PbTiO3
英文关键词: Electrons ; Ferroelectricity ; Magnetic fields ; Phase interfaces ; Strontium titanates ; Titanium ; Two dimensional electron gas ; Device application ; Ferroelectric oxides ; Ferroelectric polarization ; Fundamental physics ; Hetero interfaces ; Itinerant electrons ; Local moments ; Room temperature ferromagnetism ; Ferromagnetism
英文摘要: Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO3/PbTiO3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications. © 2020 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/169860
Appears in Collections:气候变化与战略

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作者单位: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China; Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, United States; Department of Physics, Zhejiang University, Hangzhou, 310027, China; Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

Recommended Citation:
Chen J.,Zhang Z.,Luo L.,et al. Reversible magnetism transition at ferroelectric oxide heterointerface[J]. Science Bulletin,2020-01-01,65(24)
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