DOI: 10.1016/j.scib.2019.11.016
论文题名: Lateral bipolar photoresistance effect in the CIGS heterojunction and its application in position sensitive detector and memory device
作者: Liu J. ; Zhang Z. ; Qiao S. ; Fu G. ; Wang S. ; Pan C.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期: 6 起始页码: 477
结束页码: 485
语种: 英语
中文关键词: CIGS heterostructure
; Lateral photoresistance
; Photoresponse
; Position sensitive detector
英文关键词: Efficiency
; Film preparation
; Heterojunctions
; Multilayers
; Photoelectricity
; Structural optimization
; Thin film solar cells
; Multilayer Heterojunction
; Photo-electric conversion efficiency
; Photoelectric sensors
; Photoresistance
; Photoresponses
; Position sensitivity
; Position-Sensitive Detectors
; Structure optimization
; Optical sensors
英文摘要: Cu(In,Ga)Se2 (CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect. The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response (~330 to ~1150 nm) and excellent bipolar photoresistance performances (position sensitivity of ~63.26 Ω/mm and nonlinearity <4.5%), and a fast response speed (rise and fall time of ~14.46 and ~14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 μm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures. © 2019 Science China Press Citation statistics:
资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/169985
Appears in Collections: 气候变化与战略
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作者单位: Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China; Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China; College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
Recommended Citation:
Liu J.,Zhang Z.,Qiao S.,et al. Lateral bipolar photoresistance effect in the CIGS heterojunction and its application in position sensitive detector and memory device[J]. Science Bulletin,2020-01-01,65(6)