DOI: 10.1016/j.scib.2020.06.033
论文题名: Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters
作者: Sun X. ; Zhu C. ; Liu H. ; Zheng B. ; Liu Y. ; Yi J. ; Fang L. ; Liu Y. ; Wang X. ; Zubair M. ; Zhu X. ; Wang X. ; Li D. ; Pan A.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期: 23 起始页码: 2007
结束页码: 2013
语种: 英语
中文关键词: Complementary inverter
; Reconfigurable field-effect transistor (FET)
; Schottky barrier
; Subthreshold swing
英文关键词: Electric inverters
; Field effect transistors
; Schottky barrier diodes
; Semiconductor doping
; Complementary inverters
; Field effect transistor (FETs)
; Metal semiconductor interface
; Operation conditions
; Optical and electrical properties
; Semiconducting materials
; Sub-threshold swing(ss)
; Two Dimensional (2 D)
; Selenium compounds
英文摘要: The newly emerged two-dimensional (2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductor-based field-effect transistors (FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier (SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET (RFET) devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing (SS) values (132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility (28.6 cm2/(V s) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits. © 2020 Science China Press Citation statistics:
资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170043
Appears in Collections: 气候变化与战略
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作者单位: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
Recommended Citation:
Sun X.,Zhu C.,Liu H.,et al. Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters[J]. Science Bulletin,2020-01-01,65(23)