DOI: 10.1016/j.scib.2019.11.023
论文题名: Tunable magnetism of a single-carbon vacancy in graphene
作者: Zhang Y. ; Gao F. ; Gao S. ; He L.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期: 3 起始页码: 194
结束页码: 200
语种: 英语
中文关键词: Graphene
; Magnetic moment
; Scanning tunnelling microscopy
; Single-carbon vacancy
; Tunable magnetism
英文关键词: Density functional theory
; Electrons
; Magnetic moments
; Scanning tunneling microscopy
; Carbon vacancy
; Localized state
; Magnetic state
; Spin-polarized STM
; Two-state
; Graphene
英文摘要: Creating a single-carbon vacancy introduces (quasi-)localized states for both σ and π electrons in graphene. Theoretically, interactions between the localized σ electrons and quasilocalized π electrons of a single-carbon vacancy in graphene are predicted to control its magnetism. However, experimentally confirming this prediction through manipulating the interactions remains an outstanding challenge. Here we report the manipulation of magnetism in the vicinity of an individual single-carbon vacancy in graphene by using a scanning tunnelling microscopy (STM) tip. Our spin-polarized STM measurements, complemented by density functional theory calculations, indicate that the interactions between the localized σ and quasilocalized π electrons could split the π electrons into two states with opposite spins even when they are well above the Fermi level. Via the STM tip, we successfully manipulate both the magnitude and direction of magnetic moment of the π electrons with respect to that of the σ electrons. Three different magnetic states of the single-carbon vacancy, exhibiting magnetic moments of about 1.6 μB, 0.5 μB, and 0 μB respectively, are realized in our experiment. © 2019 Science China Press Citation statistics:
资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170163
Appears in Collections: 气候变化与战略
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作者单位: Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China; Computational Science Research Center, ZPark II, Beijing, 100193, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
Recommended Citation:
Zhang Y.,Gao F.,Gao S.,et al. Tunable magnetism of a single-carbon vacancy in graphene[J]. Science Bulletin,2020-01-01,65(3)