globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2019.11.001
论文题名:
C-V characteristics of piezotronic metal-insulator-semiconductor transistor
作者: Zheng J.; Zhou Y.; Zhang Y.; Li L.; Zhang Y.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期:2
起始页码: 161
结束页码: 168
语种: 英语
中文关键词: Capacitance-voltage (C-V) characteristics ; Distribution width of strain-induced piezoelectric charges ; Metal-insulator-semiconductor ; Piezotronic effect
英文关键词: Capacitance ; Gallium nitride ; II-VI semiconductors ; III-V semiconductors ; Magnetic semiconductors ; Metal insulator boundaries ; MIS devices ; MISFET devices ; Piezoelectricity ; Semiconducting zinc compounds ; Semiconductor insulator boundaries ; Semiconductor junctions ; Wide band gap semiconductors ; Zinc oxide ; C-V characteristic ; C-V measurement ; Capacitance-voltage characteristics ; Metal-insulator-semiconductors ; Piezoelectric charge ; Piezotronic effect ; Semi-conducting property ; Third generation ; Semiconducting gallium compounds
英文摘要: Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal–insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices. © 2019 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170176
Appears in Collections:气候变化与战略

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作者单位: School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China; Department of Computer Science, University of Rochester, Rochester, NY 14627, United States; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China; Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea, SA1 8EN, United Kingdom; College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China

Recommended Citation:
Zheng J.,Zhou Y.,Zhang Y.,et al. C-V characteristics of piezotronic metal-insulator-semiconductor transistor[J]. Science Bulletin,2020-01-01,65(2)
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