globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2020.02.018
论文题名:
Near vacuum-ultraviolet aperiodic oscillation emission of AlN films
作者: Zhu Y.; Lin R.; Zheng W.; Ran J.; Huang F.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2020
卷: 65, 期:10
起始页码: 827
结束页码: 831
语种: 英语
中文关键词: AlN ; Ellipsometer ; Fluorescence spectrum ; Refractive index
英文关键词: Aluminum nitride ; Energy gap ; Fabry-Perot interferometers ; Fluorescence ; III-V semiconductors ; Optical design ; Refractive index ; Semiconductor diodes ; Spectroscopic ellipsometry ; Thin films ; Ultraviolet lasers ; Wide band gap semiconductors ; Accurate measurement ; Anisotropic thin films ; Crystallographic axes ; Deep ultraviolet lasers ; Ellipsometers ; Fluorescence spectra ; Refractive index measurement ; Variable angle spectroscopic ellipsometry ; Nitrogen compounds
英文摘要: An accurate measurement of the refractive index is necessary for the optical design of both deep ultraviolet laser diodes and light-emitting diodes. Generally, the refractive indices along different crystallographic axes of anisotropic thin films are measured using variable angle spectroscopic ellipsometry. However, there are still some limitations concerning this method. Here we proposed a potential method to measure the band edge refractive index of wide bandgap semiconductor. An aperiodic oscillation emission phenomenon due to the Fabry-Perot effect was observed in the fluorescence spectrum of an AlN film with a thickness of 1500 nm. Based on the characteristics of the fluorescence spectrum and the definition of Fabry-Perot effect, we obtained the ordinary refractive index of the AlN thin film near the band edge directly. This refractive index measurement method is a supplement to the variable angle ellipsometry, and it is a more direct and effective method for transferred film and thinner samples to measure the fluorescence spectrum. © 2020 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170187
Appears in Collections:气候变化与战略

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作者单位: State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, China; Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China

Recommended Citation:
Zhu Y.,Lin R.,Zheng W.,et al. Near vacuum-ultraviolet aperiodic oscillation emission of AlN films[J]. Science Bulletin,2020-01-01,65(10)
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