globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2021.04.018
论文题名:
Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator
作者: Li H.; Ye S.; Zhao J.; Jin C.; Wang Y.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
卷: 66, 期:14
起始页码: 1395
结束页码: 1400
语种: 英语
中文关键词: Charge transfer gap ; Cuprates ; Impurity state ; Mott insulator ; Scanning tunneling microscopy
英文关键词: Calcium compounds ; Chlorine compounds ; Copper compounds ; Electronic states ; Mott insulators ; Scanning tunneling microscopy ; Atomic scale ; Ca$+2+$ ; Charge-transfer gap ; Cuprates ; Energy ; Impurity state ; In-gap state ; Lower energies ; Mott insulators ; Spectral weight ; Charge transfer
英文摘要: We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates. © 2021 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170304
Appears in Collections:气候变化与战略

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作者单位: State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China; Songshan Lake Materials Laboratory, Dongguan, 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China; Frontier Science Center for Quantum Information, Beijing, 100084, China

Recommended Citation:
Li H.,Ye S.,Zhao J.,et al. Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator[J]. Science Bulletin,2021-01-01,66(14)
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