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作者单位: | Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, Hong Kong; College of Microtechnology & Nanotechnology, Qingdao University, Qingdao, 266071, China; State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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Recommended Citation: |
Lin J.,Wang B.,Yang Z.,et al. High-current MoS2 transistors with non-planar gate configuration[J]. Science Bulletin,2021-01-01,66(8)
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