globalchange  > 气候变化与战略
DOI: 10.1016/j.scib.2020.12.009
论文题名:
High-current MoS2 transistors with non-planar gate configuration
作者: Lin J.; Wang B.; Yang Z.; Li G.; Zou X.; Chai Y.; Liu X.; Liao L.
刊名: Science Bulletin
ISSN: 20959273
出版年: 2021
卷: 66, 期:8
起始页码: 777
结束页码: 782
语种: 英语
中文关键词: High current density ; MoS2 transistors ; Non-planar ; Omega-shaped gate
英文关键词: Geometry ; Layered semiconductors ; Molybdenum compounds ; NAND circuits ; Current saturation ; Electrostatic control ; Gate configuration ; Intrinsic property ; Non-planar transistors ; Omega-shaped-gates ; Planar geometries ; Two Dimensional (2 D) ; Field effect transistors
英文摘要: The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body. Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional (2D) semiconductors. Here we design and demonstrate a 2D MoS2 transistor with omega-shaped gate, in which the local gate coupling is enhanced by the non-planar geometry. The omega-shaped non-planar transistors exhibit a high current of 0.89 A/μm and transconductance of 32.7 μS/μm. The high performance and desirable current saturation promise the construction of robust logic gate. The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%. We also assemble NOT-AND (NAND) gate on an individual MoS2 flake, and the constructed NAND gate demonstrates the universal functionality of the transistors as well. This work provides an alternative strategy to fully take the advantages of 2D materials for high-performance field-effect transistors. © 2020 Science China Press
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资源类型: 期刊论文
标识符: http://119.78.100.158/handle/2HF3EXSE/170326
Appears in Collections:气候变化与战略

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作者单位: Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, Hong Kong; College of Microtechnology & Nanotechnology, Qingdao University, Qingdao, 266071, China; State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha, 410082, China

Recommended Citation:
Lin J.,Wang B.,Yang Z.,et al. High-current MoS2 transistors with non-planar gate configuration[J]. Science Bulletin,2021-01-01,66(8)
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