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globalchange > 过去全球变化的重建

DOI:	10.1371/journal.pone.0161736
论文题名:	Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure
作者:	Z. N. Khan; S. Ahmed; M. Ali
刊名:	PLOS ONE
ISSN:	1932-6203
出版年:	2016
发表日期:	2016-8-29
卷:	11, 期:8
语种:	英语
英文关键词:	Heat treatment ; Tin ; Dielectrics ; Semiconductors ; Atmospheric layers ; Capacitance ; Electronics ; Titanium
URL:	http://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0161736&type=printable
Citation statistics:
资源类型:	期刊论文
标识符:	http://119.78.100.158/handle/2HF3EXSE/23104
Appears in Collections:	过去全球变化的重建影响、适应和脆弱性科学计划与规划气候变化与战略全球变化的国际研究计划气候减缓与适应气候变化事实与影响

Files in This Item:

File Name/ File Size	Content Type	Version	Access	License
journal.pone.0161736.PDF（1242KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	View Download

作者单位:

Advanced Electronics Labs (AEL), International Islamic University, Islamabad, Pakistan;Comsats Institute of Information Technology, Islamabad, Pakistan;Advanced Electronics Labs (AEL), International Islamic University, Islamabad, Pakistan;Advanced Electronics Labs (AEL), International Islamic University, Islamabad, Pakistan

Recommended Citation:

Z. N. Khan,S. Ahmed,M. Ali. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure[J]. PLOS ONE,2016-01-01,11(8)

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