全球变化知识资源中心(globalchange): Search Results

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	High-current MoS2 transistors with non-planar gate configuration [期刊论文] Science Bulletin, 2021-01-01, 66 (8 Lin J.; Wang B.; Yang Z.; Li G.; Zou X.; Chai Y.; Liu X.; Liao L. View/Download：19/0
	Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor [期刊论文] Science Bulletin, 2021-01-01, Wang J.; Wang F.; Wang Z.; Huang W.; Yao Y.; Wang Y.; Yang J.; Li N.; Yin L.; Cheng R.; Zhan X.; Shan C.; He J. View/Download：15/0
	Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters [期刊论文] Science Bulletin, 2020-01-01, 65 (23 Sun X.; Zhu C.; Liu H.; Zheng B.; Liu Y.; Yi J.; Fang L.; Liu Y.; Wang X.; Zubair M.; Zhu X.; Wang X.; Li D.; Pan A. View/Download：8/0
	Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures [期刊论文] Science Bulletin, 2020-01-01, 65 (17 Wang F.; Liu J.; Huang W.; Cheng R.; Yin L.; Wang J.; Sendeku M.G.; Zhang Y.; Zhan X.; Shan C.; Wang Z.; He J. View/Download：11/0
	Controlled Growth and Optoelectronic Characterization of Crystalline Oriented Organic P-N Junction Nanostructures [项目] Alejandro Briseno View/Download：19/0


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全球变化知识资源中心